3sk41 Datasheet

The 3SK41 was explicitly engineered for high-performance amplification and mixing in the VHF and UHF spectrums. Primary Applications

The 3SK41 remains a respected component for RF enthusiasts due to its low noise and stable gain. Whether you are repairing a vintage transceiver or building a custom VHF pre-amplifier, understanding the is the first step toward a successful build. Always ensure proper ESD (Electrostatic Discharge) precautions when handling these MOSFETs, as the gates are highly sensitive to static electricity.

V(BR)GSScap V sub open paren cap B cap R close paren cap G cap S cap S end-sub ): 7.0 V 8.0 mS Maximum Input Capacitance ( Cisscap C sub i s s end-sub ): 5.0 pF Maximum Operating Temperature: Robust up to 105°C 3sk41 datasheet

The 3SK41’s two gate terminals are its defining feature. In a typical dual‑gate MOSFET, is the input that receives the RF signal to be amplified, while Gate 2 is used for a control voltage. By varying the voltage on Gate 2, the circuit can adjust the transistor’s gain, a technique known as Automatic Gain Control (AGC) in receivers. This allowed radio designers to build simpler and more sensitive front‑ends for FM tuners without relying on variable attenuators or multi‑stage control loops.

Used in VCO (Voltage-Controlled Oscillator) and PLL (Phase-Locked Loop) circuits. Security & Signal Systems: By varying the voltage on Gate 2, the

| Parameter | Symbol | Value | Notes | | :--- | :--- | :--- | :--- | | | VDS | 20 V | | | Gate-Source Voltage | VGS | 7 V | | | Drain Current | ID | 25 mA | | | Power Dissipation | Pd | 250 mW | | | Junction Temperature | Tj | 175 °C | | | Package Type | - | TO-72 | Metal can package | | Type | - | N-Channel Dual Gate MOSFET | |

The dual-gate structure of the 3SK41 offers specific advantages that single-gate transistors cannot match easily: 1. Superior AGC Performance 3sk41 datasheet

This circuit is ideal for FM radio (88-108 MHz) or aircraft band (118-136 MHz).

implementation. By varying the voltage on Gate 2, you can control the amplifier's gain without significantly affecting the input impedance or tuning, which is a major advantage in radio receiver design. Censtry.com Sourcing & Replacements

In single-gate models, the capacitance between the gate and drain is high (around 5pF), which can cause instability at high frequencies. The dual-gate structure reduces this "Miller Effect," allowing for much higher gain at 100MHz and above.

Are you looking to or designing a new RF circuit ?